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IXTT50N30

IXYS
Part Number IXTT50N30
Manufacturer IXYS
Description Power MOSFET
Published Nov 12, 2020
Detailed Description Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RD...
Datasheet PDF File IXTT50N30 PDF File

IXTT50N30
IXTT50N30

Overview
Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 300 V 300 V ±20 V ±30 V 50 A 200 A 50 A 50 mJ 1.
5 J 5 V/ns 400 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C 300 °C 1.
13/10 Nm/lb.
in.
6 g 5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Characteristic Values Min.
Typ.
Max.
300 V 2.
0 4.
0 V ±100 nA 25 µA 250 µA 65 mΩ TO-247 (IXTH) (TAB) TO-268 (IXTT) GS D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2003 IXYS All rights reserved DS99011A(08/03) IXTH 50N30 IXTT 50N30 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.
Typ.
Max.
TO-247 Outline gfs VDS = 10 V; ID = 0.
5 ID25, pulse test 24 36 S Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 4400 pF 700 pF 240 pF 123 td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VGS = 10 V, VDS = 0.
5 VDSS, ID = 0.
5 ID25 RG = 2 Ω (External) VGS = 10 V, VDS = 0.
5 VDSS, ID = 0.
5 ID25 (TO-247) 24 ns 33 ns 70 ns...


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