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IXTK75N30

IXYS
Part Number IXTK75N30
Manufacturer IXYS
Description Power MOSFET
Published Nov 13, 2020
Detailed Description Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 75N30 VDSS = ID25 = = RDS(...
Datasheet PDF File IXTK75N30 PDF File

IXTK75N30
IXTK75N30

Overview
Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 75N30 VDSS = ID25 = = RDS(on) 300 V 75 A 42 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 I DM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.
0 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque TO-264 Maximum ratings 300 V 300 V ±20 V ±30 V 75 A 300 A 75 A 60 mJ 2.
5 J 5 V/ns TO-264 AA (IXTK) G D S D (TAB) G = Gate S = Source D = Drain Tab = Drain 540 -55 .
.
.
+150 150 -55 .
.
.
+150 300 0.
7/6 10 W °C °C °C °C Nm/lb.
in.
g Features •Low R HDMOSTM process DS (on) •Rugged polysilicon gate cell structure •International standard package •Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V DC, VDS = 0 IDSS VDS = VDSS V =0V GS TJ = 25°C T = 125°C J R DS(on) V = 10 V, I = 0.
5 I GS D D25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% Characteristic Values Min.
Typ.
Max.
300 V 2.
0 4.
0 V ±100 nA 50 µA 2 mA 42 mΩ Applications • Motorcontrols • DC choppers • Switched-mode power supplies Advantages • Easy to mount with one screw (isolated mounting screw hole) • Space savings • High power density © 2003 IXYS All rights reserved DS99012(03/03) IXTK 75N30 Symbol Test Conditions (T = 25°C unless otherwise specified) J g V = 10 V; I = 0.
5 I , pulse test fs DS D D25 Characteristic values Min.
Typ.
Max.
45 60 S Ciss 6000 pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1010 pF Crss 400 pF td(on) 24 ns t V = 10 V, V = 0.
5 V , I = 0.
5 I 25 ns r GS DS DSS D D25 t d(off) R G = 1.
5 Ω (External) 88 ns t 20 ns f Q G(on) Q GS Q GD 240 nC V = 10 V, V = 0.
5 V , I = 0...


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