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IXTK200N10L2

INCHANGE
Part Number IXTK200N10L2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 16, 2020
Detailed Description Isc N-Channel MOSFET Transistor IXTK200N10L2 ·FEATURES ·With To-3PL package ·Low input capacitance and gate charge ·Lo...
Datasheet PDF File IXTK200N10L2 PDF File

IXTK200N10L2
IXTK200N10L2

Overview
Isc N-Channel MOSFET Transistor IXTK200N10L2 ·FEATURES ·With To-3PL package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 200 IDM Drain Current-Single Pulsed 500 PD Total Dissipation @TC=25℃ 1040 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
12 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IXTK102N30P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITI...


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