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IXTK250N10

INCHANGE
Part Number IXTK250N10
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 16, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance :...
Datasheet PDF File IXTK250N10 PDF File

IXTK250N10
IXTK250N10

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 250 A IDM Drain Current-Single Plused 1000 A PD Total Dissipation @TC=25℃ 730 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.
17 UNIT ℃/W IXTK250N10 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTK250N10 ·ELECTR...


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