DatasheetsPDF.com

IXTP2N65X2

INCHANGE
Part Number IXTP2N65X2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 16, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTP2N65X2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.3Ω@VGS=10V ·Fully...
Datasheet PDF File IXTP2N65X2 PDF File

IXTP2N65X2
IXTP2N65X2

Overview
isc N-Channel MOSFET Transistor IXTP2N65X2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.
3Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 2 IDM Drain Current-Single Pulsed 4 PD Total Dissipation @TC=25℃ 55 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.
27 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdo...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)