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IXTP16N50PM

Part Number	IXTP16N50PM
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 16, 2020
Detailed Description	isc N-Channel MOSFET Transistor IXTP16N50PM ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on...
Datasheet	IXTP16N50PM PDF File

Overview

isc N-Channel MOSFET Transistor IXTP16N50PM ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 420mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.
5 IDM Drain Current-Single Pulsed 35 PD Total Dissipation @TC=25℃ 75 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·TH...

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