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MBRS1035

INCHANGE
Part Number MBRS1035
Manufacturer INCHANGE
Description Schottky Barrier Rectifier
Published Nov 18, 2020
Detailed Description Schottky Barrier Rectifier INCHANGE Semiconductor MBRS1035 FEATURES ·Schottky barrier chip ·Low Power Loss/High Effici...
Datasheet PDF File MBRS1035 PDF File

MBRS1035
MBRS1035


Overview
Schottky Barrier Rectifier INCHANGE Semiconductor MBRS1035 FEATURES ·Schottky barrier chip ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Low Forward Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high frequency rectifier of switching mode Power supplies, freewheeling diodes, DC-to-DC converters Or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 35 V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current 8.
3 ms Single Half Sine-wave Superimposed 120 A on Rated Load TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.
isc.
com isc &1 iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRS1035 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.
0 UNIT ℃/W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS IF= 10A ; Tj=125℃ VF Maximum Voltage Instantaneous Forward IF= 20A ; Tj=25℃ IF= 20A ; Tj=125℃ IR Maximum Current Instantaneous Reverse VR= VRWM, Tj= 25℃ VR= VRWM, Tj= 125℃ TYP MAX UNIT 0.
57 0.
84 V 0.
72 100 μA 15 mA isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark ...


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