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MBRS10150

Taiwan Semiconductor
Part Number MBRS10150
Manufacturer Taiwan Semiconductor
Description Surface Mount Schottky Barrier Rectifiers
Published Mar 27, 2016
Detailed Description MBRS1035 - MBRS10150 Taiwan Semiconductor CREAT BY ART 10A, 35V - 150V Surface Mount Schottky Barrier Rectifiers FEATUR...
Datasheet PDF File MBRS10150 PDF File

MBRS10150
MBRS10150

Overview
MBRS1035 - MBRS10150 Taiwan Semiconductor CREAT BY ART 10A, 35V - 150V Surface Mount Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no.
with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.
37 g (approximately) TO-263AB (D2PAK) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER MBRS MBRS MBRS MBRS MBRS MBRS MBRS SYMBOL 1035 1045 1050 1060 1090 10100 10150 Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 Maximum RMS voltage VRMS 24 31 35 42 63 70 105 Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 Maximum average forward rectified current IF(AV) 10 Peak forward surge current, 8.
3 ms single half sine-wave superimposed on rated load IFSM 120 UNIT V V V A A Peak repetitive reverse surge Current (Note 1) IRRM 1 0.
5 A Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25°C IF=10A, TJ=125°C IF=20A, TJ=25°C IF=20A, TJ=125°C Maximum reverse current @ rated VR Voltage rate of change (Rated VR) TJ=25°C TJ=100°C TJ=125°C Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: 2.
0us Pulse Width, f=1.
0KHz VF IR dV/dt RθJC RθJA TJ TSTG - 0.
80 0.
85 1.
05 0.
57 0.
70 0.
71 - V 0.
84 0.
95 - - 0.
72 0.
85 - - 0.
1 15 10 - mA - 5 10000 V/μs 2 °C/W 60 - 55 to +175 °C - 55 to +175 °C Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle...


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