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IXTP75N10P

INCHANGE
Part Number IXTP75N10P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 19, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTP75N10P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 25mΩ ·Fully charact...
Datasheet PDF File IXTP75N10P PDF File

IXTP75N10P
IXTP75N10P

Overview
isc N-Channel MOSFET Transistor IXTP75N10P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 25mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 300 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·TH...


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