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IXTQ22N60P

INCHANGE
Part Number IXTQ22N60P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 20, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :...
Datasheet PDF File IXTQ22N60P PDF File

IXTQ22N60P
IXTQ22N60P

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Plused 66 A PD Total Dissipation @TC=25℃ 400 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.
31 UNIT ℃/W IXTQ22N60P isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTQ22N60P ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250uA 3 5.
5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 11A 350 mΩ IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Diode Forward On-voltage VGS= ±30V;VDS= 0 VDS=600V; VGS= 0 VDS=600V; VGS= 0;TJ=125℃ IF= 22A ;VGS= 0 ±100 nA 25 250 µA 1.
5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applicat...


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