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IXTQ60N10T

IXYS
Part Number IXTQ60N10T
Manufacturer IXYS
Description Power MOSFET
Published Nov 20, 2020
Detailed Description Advance Technical Information TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IX...
Datasheet PDF File IXTQ60N10T PDF File

IXTQ60N10T
IXTQ60N10T

Overview
Advance Technical Information TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ60N10T VDSS = 100V ID25 = 60A RDS(on) ≤ 18.
0mΩ TO-3P Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 100 V 100 V ± 30 V 60 A 180 A 10 A 500 mJ 176 W -55 .
.
.
+175 °C 175 °C -55 .
.
.
+175 °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
5.
5 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 50μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 25A, Note 1 Characteristic Values Min.
Typ.
Max.
100 V 2.
5 4.
5 V ± 100 nA 1 μA 100 μA 14.
8 18.
0 mΩ G D S G = Gate S = Source Tab D = Drain Tab = Drain Features z 175°C Operating Temperature z Avalanche Rated z Low RDS(on) z Fast Intrinsic Diode z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC/DC Converters and Off-Line UPS z Primary Switch for 24V and 48V Systems z High Current Switching Applications z Distributed Power Architechtures and VRMs z Electronic Valve Train Systems z High Voltage Synchronous Recifier © 2010 IXYS CORPORATION, All Rights Reserved DS100289(10/10) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.
5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.
5 • VDSS, ID = 10A RG = 15Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.
5 • VDSS, ID = 10A Qgd RthJC RthCH Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM ...


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