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IXTQ88N28T

IXYS
Part Number IXTQ88N28T
Manufacturer IXYS
Description Power MOSFET
Published Nov 20, 2020
Detailed Description Trench Gate Power MOSFET IXTQ88N28T N-Channel Enhancement Mode For Plasma Display Applications VDSS = ID25 = ≤ RDS(on...
Datasheet PDF File IXTQ88N28T PDF File

IXTQ88N28T
IXTQ88N28T

Overview
Trench Gate Power MOSFET IXTQ88N28T N-Channel Enhancement Mode For Plasma Display Applications VDSS = ID25 = ≤ RDS(on) 280V 88A 44mΩ Symbol VDSS VDGR VGSM ID25 IDRMS IDM PD TJ TJM Tstg T L TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C Maximum lead temperature for soldering 1.
6mm (0.
062 in.
) from case for 10s Mounting torque Maximum Ratings 280 V 280 V TO-3P (IXTQ) ±30 V 88 A G 75 A DS 250 A (TAB) 625 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
5.
5 g G = Gate S = Source D = Drain TAB = Drain Fe...


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