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IXTQ470P2

IXYS
Part Number IXTQ470P2
Manufacturer IXYS
Description Power MOSFET
Published Nov 21, 2020
Detailed Description Advance Technical Information PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode I...
Datasheet PDF File IXTQ470P2 PDF File

IXTQ470P2
IXTQ470P2

Overview
Advance Technical Information PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ470P2 VDSS = ID25 = ≤ RDS(on) = trr(typ) 500V 42A 145mΩ 400ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 500 V 500 V ± 30 V ± 40 V 42 A 126 A 42 A 1.
3 J 10 V/ns 830 W -55 .
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+150 °C 150 °C -55 .
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+150 °C 300 °...


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