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IXTU1R4N60P

INCHANGE
Part Number IXTU1R4N60P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 23, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTU1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Full...
Datasheet PDF File IXTU1R4N60P PDF File

IXTU1R4N60P
IXTU1R4N60P

Overview
isc N-Channel MOSFET Transistor IXTU1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.
0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 1.
4 A IDM Drain Current-Single Pulsed 2.
1 A PD Total Dissipation @TC=25℃ 50 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature ...


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