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IXTY12N06T

IXYS
Part Number IXTY12N06T
Manufacturer IXYS
Description Power MOSFET
Published Nov 23, 2020
Detailed Description Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU12N06T IXTY12...
Datasheet PDF File IXTY12N06T PDF File

IXTY12N06T
IXTY12N06T

Overview
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU12N06T IXTY12N06T VDSS = ID25 = RDS(on) ≤ 60V 12A 85mΩ TO-251 (IXTU) Symbol VDSS VDGR VGSM ID25 IDM ILRMS IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM Package Current Limit, RMS TO-252 TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10s Mounting torque TO-251 TO-252 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 25μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Notes 1, 2 Maximum Ratings 60 V 60 V ±20 V 12 A 30 A 25 A 3 A 20 mJ 33 -55 .
.
.
+175 175 -55 .
.
.
+175 300 260 1.
13/10 0.
40 0.
35 W °C °C °C °C °C Nm/lb.
in.
g g Characteristic Values Min.
Typ.
Max.
...


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