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IXTY1R4N100P

INCHANGE
Part Number IXTY1R4N100P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 23, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTY1R4N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V ·Fu...
Datasheet PDF File IXTY1R4N100P PDF File

IXTY1R4N100P
IXTY1R4N100P

Overview
isc N-Channel MOSFET Transistor IXTY1R4N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.
8Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 1.
4 A IDM Drain Current-Single Pulsed 3.
0 A PD Total Dissipation @TC=25℃ 63 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THE...


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