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IXTY2N65X2

INCHANGE
Part Number IXTY2N65X2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 23, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTY2N65X2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.3Ω@VGS=10V ·Fully...
Datasheet PDF File IXTY2N65X2 PDF File

IXTY2N65X2
IXTY2N65X2

Overview
isc N-Channel MOSFET Transistor IXTY2N65X2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.
3Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pulsed 4 A PD Total Dissipation @TC=25℃ 55 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.
27 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source ...


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