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IXTY4N70X2

INCHANGE
Part Number IXTY4N70X2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 23, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 700V ·Static Drain-Source On-Resistance : RDS...
Datasheet PDF File IXTY4N70X2 PDF File

IXTY4N70X2
IXTY4N70X2

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 700V ·Static Drain-Source On-Resistance : RDS(on) ≤ 850mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Plused 8 A PD Total Dissipation @TC=25℃ 80 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTER...


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