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AOB42S60

Alpha & Omega Semiconductors
Part Number AOB42S60
Manufacturer Alpha & Omega Semiconductors
Description Power Transistor
Published Nov 23, 2020
Detailed Description AOT42S60/AOB42S60 600V 37A α MOS TM Power Transistor General Description Product Summary The AOT42S60 & AOB42S60 have...
Datasheet PDF File AOB42S60 PDF File

AOB42S60
AOB42S60

Overview
AOT42S60/AOB42S60 600V 37A α MOS TM Power Transistor General Description Product Summary The AOT42S60 & AOB42S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these devices can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 166A 0.
109Ω 40nC 9.
2µJ Top View TO-220 TO-263 D2PAK D AOT42S60 Orderable Part Number AOT42S60L AOB42S60L GDS G AOB42S60 Package Type TO-220 Green TO-263 Green G S S Form Minimum Order Quantity Tube 1000 Tape & Reel 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT42S60/AOB42S60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS 37 23 166 11 234 1345 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.
3 MOSFET dv/dt ruggedness 100 Peak diode recovery dv/dt H dv/dt 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT42S60/AOB42S60 65 0.
5 Maximum Junction-to-Case RθJC 0.
3 Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev4: April 2014 www.
aosmd.
com Page 1 of 6 AOT42S60/AOB42S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=1...


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