DatasheetsPDF.com

IXTY50N085T

INCHANGE
Part Number IXTY50N085T
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 25, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 23mΩ@VGS=10V ·Fully characteriz...
Datasheet PDF File IXTY50N085T PDF File

IXTY50N085T
IXTY50N085T

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 23mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 85 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pulsed 130 A PD Total Dissipation @TC=25℃ 130 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYM...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)