DatasheetsPDF.com

MJ411

Part Number	MJ411
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Nov 25, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) ·Colle...
Datasheet	MJ411 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.
) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
8 V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current 10 A PC Collector Power Dissipation@TC=25℃ 100 W TJ, Tstg Operating and Storage...

Similar Datasheet

MJ400 Bipolar NPN Device - Seme LAB
MJ4030 Power Transistors - Mospec
MJ4030 Silicon PNP Darlingtion Power Transistor - Inchange Semiconductor
MJ4030 (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS - Comset Semiconductors
MJ4030 Power Transistor - Motorola
MJ4031 (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS - Comset Semiconductors
MJ4031 Bipolar PNP Device - Seme LAB
MJ4031 Silicon PNP Darlingtion Power Transistor - Inchange Semiconductor
MJ4031 Power Transistor - Motorola
MJ4032 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS - ST Microelectronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)