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MMD65R900QRH

INCHANGE
Part Number MMD65R900QRH
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 25, 2020
Detailed Description Isc N-Channel MOSFET Transistor MMD65R900QRH ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate char...
Datasheet PDF File MMD65R900QRH PDF File

MMD65R900QRH
MMD65R900QRH

Overview
Isc N-Channel MOSFET Transistor MMD65R900QRH ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 4.
7 3.
0 14.
1 PD Total Dissipation @TC=25℃ 34.
7 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.
4 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER C...


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