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QM5HG-24

INCHANGE
Part Number QM5HG-24
Manufacturer INCHANGE
Description NPN Transistor
Published Nov 25, 2020
Detailed Description isc Silicon NPN Power Transistor QM5HG-24 DESCRIPTION ·High Power Handling capacity ·High Collector-Base Voltage- : VC...
Datasheet PDF File QM5HG-24 PDF File

QM5HG-24
QM5HG-24

Overview
isc Silicon NPN Power Transistor QM5HG-24 DESCRIPTION ·High Power Handling capacity ·High Collector-Base Voltage- : VCBO= 1200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Base driver for High voltage transistor modules ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEX Collector-Emitter Voltage 1200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 100 W -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
6A VBE(sat) B...


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