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SPA08N50C3

INCHANGE
Part Number SPA08N50C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 27, 2020
Detailed Description INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 7.6A@ TC=25℃ ·Drain Source Voltage-...
Datasheet PDF File SPA08N50C3 PDF File

SPA08N50C3
SPA08N50C3

Overview
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 7.
6A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 7.
6 4.
6 A IDM Drain Current-Single Pulsed 22.
8 A PD Total Dissipation @TC=25℃ 32 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 3.
9 ℃/W Rth(ch-a) Channel-to-ambient thermal resistance 80 ℃/W SPA08N50C3 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Is...


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