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AOB1100L

Part Number	AOB1100L
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 27, 2020
Detailed Description	isc N-Channel MOSFET Transistor AOB1100L FEATURES ·Drain Current –ID= 130A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V...
Datasheet	AOB1100L PDF File

Overview

isc N-Channel MOSFET Transistor AOB1100L FEATURES ·Drain Current –ID= 130A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11.
7mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 130 A IDM Drain Current-Single Pluse 208 A PD Total Dissipation @TC=25℃ 250 W TJ Max.
Operating Junction Temperature -55~175 ...

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