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AOT11S60L

INCHANGE
Part Number AOT11S60L
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 28, 2020
Detailed Description isc N-Channel MOSFET Transistor AOT11S60L FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V...
Datasheet PDF File AOT11S60L PDF File

AOT11S60L
AOT11S60L

Overview
isc N-Channel MOSFET Transistor AOT11S60L FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
399Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 45 A PD Total Dissipation @TC=25℃ 178 W TJ Max.
Operating Junction Temperature -55~150 ℃ ...


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