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SPI20N60CFD

INCHANGE
Part Number SPI20N60CFD
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 3, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.22Ω ·Enhancement mode ·Fast Sw...
Datasheet PDF File SPI20N60CFD PDF File

SPI20N60CFD
SPI20N60CFD

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
22Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.
7 IDM Drain Current-Single Pulsed 52 PD Total Dissipation @TC=25℃ 208 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c)...


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