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STB15N65M5-2

INCHANGE
Part Number STB15N65M5-2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 4, 2020
Detailed Description isc N-Channel MOSFET Transistor STB15N65M5-2 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 6...
Datasheet PDF File STB15N65M5-2 PDF File

STB15N65M5-2
STB15N65M5-2

Overview
isc N-Channel MOSFET Transistor STB15N65M5-2 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 340mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 650 V ±25 V 11 A 44 A 8...


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