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STB18N65M5

INCHANGE
Part Number STB18N65M5
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 4, 2020
Detailed Description Isc N-Channel MOSFET Transistor ·FEATURES ·Higher VDSS rating ·Excellent switching performance ·100% avalanche tested ·...
Datasheet PDF File STB18N65M5 PDF File

STB18N65M5
STB18N65M5

Overview
Isc N-Channel MOSFET Transistor ·FEATURES ·Higher VDSS rating ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 15 9.
4 A IDM Drain Current-Single Pulsed 60 A PD Total Dissipation 110 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
14 UNI...


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