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STB22NM60N

Part Number	STB22NM60N
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 4, 2020
Detailed Description	Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB22NM60N ·FEATURES ·Low input capacitance and gate charge ·Lo...
Datasheet	STB22NM60N PDF File

Overview

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB22NM60N ·FEATURES ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 16 10 A IDM Drain Current-Single Pulsed 64 A PD Total Dissipation 125 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) C...

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