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STF9NM60N

INCHANGE
Part Number STF9NM60N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 5, 2020
Detailed Description isc N-Channel MOSFET Transistor STF9NM60N FEATURES ·Drain Current –ID= 6.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600...
Datasheet PDF File STF9NM60N PDF File

STF9NM60N
STF9NM60N

Overview
isc N-Channel MOSFET Transistor STF9NM60N FEATURES ·Drain Current –ID= 6.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
745Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 6.
5 A IDM Drain Current-Single Pluse 26 A PD Total Dissipation @TC=25℃ 25 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERIST...


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