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FDPF18N50

ON Semiconductor
Part Number FDPF18N50
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 6, 2020
Detailed Description MOSFET – N-Channel, UniFETt 500 V, 18 A, 265 mW FDP18N50 / FDPF18N50 / FDPF18N50T Description UniFET MOSFET is onsemi's ...
Datasheet PDF File FDPF18N50 PDF File

FDPF18N50
FDPF18N50


Overview
MOSFET – N-Channel, UniFETt 500 V, 18 A, 265 mW FDP18N50 / FDPF18N50 / FDPF18N50T Description UniFET MOSFET is onsemi's high voltage MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features • RDS(on) = 220 mW (Typ.
) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ.
45 nC) • Low Crss (Typ.
25 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply DATA SHEET www.
onsemi.
com VDS 500 V RDS(ON) MAX 265 mW @ 9 V D ID MAX 18 A G S GDS TO−220−3LD CASE 340AT GDS TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT MARKING DIAGRAM &Z&3&K FDP 18N50 &Z&3&K FDPF 18N50 18N50T FDP18N50, FDPF18N50 FDPF18N50T = Specific Device Code &Z = Assembly Location &3 = Date Code (Year and Week) &K = Lot Code ORDERING INFORMATION Device Package Shipping FDP18N50 TO−220 1000 Units / Tube FDPF18N50 TO−220F 1000 Units / Tube FDPF18N50T TO−220F 1000 Units / Tube © Semiconductor Components Industries, LLC, 2012 1 November, 2023 − Rev.
4 Publication Order Number: FDPF18N50T/D FDP18N50 / FDPF18N50 / FDPF18N50T MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter FDP18N50 FDPF18N50 / Unit FDPF18N50T VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain to Source Voltage Drain Current − − Continuous (TC = 25°C) − Continuous (TC = 100°C) Drain Current − Pulsed (Note 1) Gate to Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 18 18* 10.
8 10.
8* 72 72* ±30 945 18 23.
5 4.
5 V A A V mJ A mJ V/ns PD Power Dissipation (TC =...



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