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MBC13917

NXP
Part Number MBC13917
Manufacturer NXP
Description SiGe:C RF Cascode Low-Noise Amplifier
Published Dec 6, 2020
Detailed Description Freescale Semiconductor Data Sheet: Advance Information Document Number: MBC13917 Rev. 1.0, 12/2010 MBC13917 MBC13917 ...
Datasheet PDF File MBC13917 PDF File

MBC13917
MBC13917

Overview
Freescale Semiconductor Data Sheet: Advance Information Document Number: MBC13917 Rev.
1.
0, 12/2010 MBC13917 MBC13917 General Purpose SiGe:C RF Cascode Low Noise Amplifier Package Information Plastic Package: MLPD-6 1.
5 mm x 2.
0 mm Case: 2129-01 Ordering Information Device MBC13917EP Device Marking or Operating Temperature Range 917 Package MLPD-6 1 Introduction The MBC13917 is a cost-effective, high isolation amplifier fabricated with an advanced RF BiCMOS process using the SiGe:C module.
This is the leadless package version of the MBC13916 device.
The MBC13917 is designed for a wide range of general purpose RF applications and has excellent high frequency gain and noise figure.
On-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility.
Contents 1 Introduction .
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1 2 Electrical Characteristics .
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3 3 Scattering and Noise Parameters .
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6 4 Application Circuits .
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24 5 Printed Circuit Board and Bill of Materials .
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33 6 Packaging .
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37 7 Product Documentation .
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38 8 Revision History .
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38 1.
1 Features The MBC13917 has the following features: • Usable frequency range = 100 MHz to 2500 MHz • 27 dB typical gain at 434 MHz, Vcc = 2.
7V • NFmin (device level) = 0.
95 dB @ 434 MHz • NFmin (device level) = 0.
95 dB @ 900 MHz • 6.
5 dBm typical output power at -10 dBm Pin at 900 MHz, Vcc = 2.
7V This document contains information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc.
, 2006–2010.
All rights reserved.
Introduction • 46 dB typical reverse isolation (device level) at 434 MHz, Vcc = 2.
7V • 4.
7 mA typical bias current at Vcc = 2.
7V • ...


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