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STF45N10F7

INCHANGE
Part Number STF45N10F7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 7, 2020
Detailed Description isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Stat...
Datasheet PDF File STF45N10F7 PDF File

STF45N10F7
STF45N10F7

Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 100 V ±20 V 45 A 180 A 60 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 2.
5 UNIT ℃/W STF45N10F7 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STF45N10F7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise...


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