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STH150N10F7-2

INCHANGE
Part Number STH150N10F7-2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 7, 2020
Detailed Description isc N-Channel MOSFET Transistor STH150N10F7-2 FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS=...
Datasheet PDF File STH150N10F7-2 PDF File

STH150N10F7-2
STH150N10F7-2

Overview
isc N-Channel MOSFET Transistor STH150N10F7-2 FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.
9mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 100 V ±20 V 110 A 440 ...


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