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STI13NM60N

INCHANGE
Part Number STI13NM60N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 7, 2020
Detailed Description Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Sta...
Datasheet PDF File STI13NM60N PDF File

STI13NM60N
STI13NM60N

Overview
Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 360mΩ(Max) ·100% avalanche tested ·Low input capacitance and gate charge ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGSS Drain-Source Voltage Gate-Source Voltage 600 V ±25 V ID Drain Current-Continuous@TC=25℃ 11 A IDM Drain Current-Single Pulsed PD Total Dissipation 44 A 25 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·T...


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