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STP7NM60N

INCHANGE
Part Number STP7NM60N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 8, 2020
Detailed Description isc N-Channel MOSFET Transistor STP7NM60N FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(...
Datasheet PDF File STP7NM60N PDF File

STP7NM60N
STP7NM60N

Overview
isc N-Channel MOSFET Transistor STP7NM60N FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 900mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±25 V 5 A 20 A 45 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS ...


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