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STP9NM40N

INCHANGE
Part Number STP9NM40N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 8, 2020
Detailed Description isc N-Channel MOSFET Transistor STP9NM40N FEATURES ·Drain Current –ID= 22.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40...
Datasheet PDF File STP9NM40N PDF File

STP9NM40N
STP9NM40N

Overview
isc N-Channel MOSFET Transistor STP9NM40N FEATURES ·Drain Current –ID= 22.
4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 790mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 22.
4 A PD Total Dissipation @TC=25℃ 60 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.
08 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=...


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