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STP12N65M5

INCHANGE
Part Number STP12N65M5
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 8, 2020
Detailed Description isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Fast...
Datasheet PDF File STP12N65M5 PDF File

STP12N65M5
STP12N65M5


Overview
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 8.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 8.
5 A IDM Pulse Drain Current 34 A Ptot Total Dissipation@TC=25℃ 70 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistan...



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