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STP21NM60ND

INCHANGE
Part Number STP21NM60ND
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP21NM60ND ·FEATURES ·With TO-220 package ·Low input capacitan...
Datasheet PDF File STP21NM60ND PDF File

STP21NM60ND
STP21NM60ND

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP21NM60ND ·FEATURES ·With TO-220 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 17 10 A IDM Drain Current-Single Pulsed 68 A PD Total Dissipation @TC=25℃ 140 W Tch Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
89 62.
5 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP21NM60ND ELECTRICAL CHARACTE...


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