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STP26NM60ND

Part Number	STP26NM60ND
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 9, 2020
Detailed Description	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Stati...
Datasheet	STP26NM60ND PDF File

Overview

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 175mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±25 V 21 A 84 A 190 W -55~150 ...

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