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STP32NM50N

INCHANGE
Part Number STP32NM50N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·1...
Datasheet PDF File STP32NM50N PDF File

STP32NM50N
STP32NM50N

Overview
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 22 A ID(puls) Pulse Drain Current 88 A Ptot Total Dissipation@TC=25℃ 190 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
66 ℃/W STP32NM50N .
isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STP32NM50N ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; I...


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