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STP100N10F7

INCHANGE
Part Number STP100N10F7
Manufacturer INCHANGE
Description TO-220 N-Channel MOSFET
Published Dec 9, 2020
Detailed Description Isc N-Channel MOSFET Transistor STP100N10F7 ·FEATURES ·With To-220 package ·Low input capacitance and gate charge ·Low...
Datasheet PDF File STP100N10F7 PDF File

STP100N10F7
STP100N10F7

Overview
Isc N-Channel MOSFET Transistor STP100N10F7 ·FEATURES ·With To-220 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 80 62 A IDM Drain Current-Single Pulsed 320 A PD Total Dissipation @TC=25℃ 120 W Tch Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
25 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor STP100N10F7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Dra...


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