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STW23NM50N

INCHANGE
Part Number STW23NM50N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Stat...
Datasheet PDF File STW23NM50N PDF File

STW23NM50N
STW23NM50N

Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 17 A IDM Drain Current-Single Pluse 68 A PD Total Dissipation @TC=25℃ 125 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature...


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