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TK11A65D

Part Number	TK11A65D
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 9, 2020
Detailed Description	isc N-Channel MOSFET Transistor TK11A65D ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.7Ω@10V ·Fast Switching Sp...
Datasheet	TK11A65D PDF File

Overview

isc N-Channel MOSFET Transistor TK11A65D ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.
7Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 44 PD Total Dissipation @TC=25℃ 45 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resist...

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