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TK16N60W

INCHANGE
Part Number TK16N60W
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description isc N-Channel MOSFET Transistor TK16N60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.19Ω. ·Enhancement mode:...
Datasheet PDF File TK16N60W PDF File

TK16N60W
TK16N60W

Overview
isc N-Channel MOSFET Transistor TK16N60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.
19Ω.
·Enhancement mode: Vth =2.
7 to 3.
7V (VDS = 10 V, ID=0.
79mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 15.
8 A IDM Drain Current-Single Pulsed 63.
2 A PD Total Dissipation @TC=25℃ 130 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER...


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