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TK39J60W5

INCHANGE
Part Number TK39J60W5
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description isc N-Channel MOSFET Transistor TK39J60W5 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.074Ω. ·Enhancement mod...
Datasheet PDF File TK39J60W5 PDF File

TK39J60W5
TK39J60W5

Overview
isc N-Channel MOSFET Transistor TK39J60W5 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.
074Ω.
·Enhancement mode: Vth =3 to4.
5V (VDS = 10 V, ID=1.
9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 38.
8 A IDM Drain Current-Single Pulsed 155 A PD Total Dissipation @TC=25℃ 270 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
463 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage ...


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