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TRS10E65F

Toshiba
Part Number TRS10E65F
Manufacturer Toshiba
Description SiC Schottky Barrier Diode
Published Dec 9, 2020
Detailed Description SiC Schottky Barrier Diode TRS10E65F 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power...
Datasheet PDF File TRS10E65F PDF File

TRS10E65F
TRS10E65F

Overview
SiC Schottky Barrier Diode TRS10E65F 1.
Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2.
Features (1) Chip design of 2nd generation.
(2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ.
) (4) The reverse current is small.
: IR = 0.
5 µA (Typ.
) 3.
Packaging and Internal Circuit TRS10E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-07 2018-06-27 Rev.
2.
0 TRS10E65F 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repeti...


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