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057N08N

Infineon
Part Number 057N08N
Manufacturer Infineon
Description MOSFET
Published Dec 12, 2020
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,80V OptiMOS™3Power-Transistor IPA05...
Datasheet PDF File 057N08N PDF File

057N08N
057N08N

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,80V OptiMOS™3Power-Transistor IPA057N08N3G DataSheet Rev.
2.
2 Final PowerManagement&Multimarket OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 • Fully isolated package (2500 VAC; 1 minute) Type IPA057N08N3 G IPA057N08N3 G Product Summary VDS RDS(on),max ID 80 V 5.
7 mW 60 A Package Marking PG-TO220-FP 057N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current ID T C=25 °C2) 60 T C=100 °C 43 Pulsed drain current3) I D,pulse T C=25 °C 240 Avalanche energy, single pulse4) E AS I D=60 A, R GS=25 W 290 Gate source voltage V GS ±20 Power dissipation P tot T C=25 °C 39 Operating and storage temperature T j, T stg -55 .
.
.
175 IEC climatic category; DIN IEC 68-1 55/175/56 1)J-STD20 and JESD22 2) Current is limited by package; with an RthJC=1 K/W in a standard TO-220 package the chip is able to carry 119A.
3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Unit A mJ V W °C Rev.
2.
2 page 1 2015-08-27 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC IPA057N08N3 G min.
Values typ.
Unit max.
- - 3.
8 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 80 Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - V DS=80 V, V GS=0 V, T j=125 °C - Gate-source leakage current I GSS V GS=20 V, V ...


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