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037N08N

Infineon
Part Number 037N08N
Manufacturer Infineon
Description Power Transistor
Published Dec 12, 2020
Detailed Description OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC...
Datasheet PDF File 037N08N PDF File

037N08N
037N08N

Overview
OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPA037N08N3 G Product Summary VDS RDS(on),max ID IPA037N08N3 G 80 V 3.
7 mW 75 A Package Marking PG-TO220-FP 037N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current ID T C=25 °C2) 75 T C=100 °C 54 Pulsed drain current3) I D,pulse T C=25 °C 300 Avalanche energy, single pulse4) E AS I D=75 A, R GS=25 W 680 Gate source voltage V GS ±20 Power dissipation P tot T C=25 °C 41 Operating and storage temperature T j, T stg -55 .
.
.
175 IEC climatic category; DIN IEC 68-1 55/175/56 1)J-STD20 and JESD22 2) Current is limited by package; with an RthJC=0.
7 K/W in a standard TO-220 package the chip is able to carry 178A.
3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Unit A mJ V W °C Rev.
2.
1 page 1 2013-08-27 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC IPA037N08N3 G min.
Values typ.
Unit max.
- - 3.
7 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA 80 V GS(th) V DS=V GS, I D=155 µA 2 I DSS V DS=80 V, V GS=0 V, T j=25 °C - V DS=80 V, V GS=0 V, T j=125 °C - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - Drain-source on-state resistance R DS(on) V GS=10 V, I D=75 A - V GS=6 V, I D=38 A - Gate resistance RG - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=75 A 66 - -V 2.
8 3...


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